| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a submount which can bond the entire region of the bonding surface of a semiconductor laser chip stably, and can use a substrate in common to an Ag paste type product by taking out the substrate temporarily into the atmosphere at a stage in the fabrication process where an Au layer is formed. <P>SOLUTION: The submount 50 has substrates 1 and 2 principally comprising Si, and impurity diffusion layers 4 and 5 formed by diffusing impurities in a region on the surface 1a of a substrate where a semiconductor laser chip is mounted. A TiW layer 7, an Au layer 8, a Pt layer 11, and an AuSn layer 9 are formed sequentially on the impurity diffusion layer 5. Thickness of the Pt layer 11 is set such that the Pt layer 11 is left when the AuSn layer 9 is melted in order to bond that semiconductor laser chip depending on the thickness of an Au electrode layer formed on the lower surface of a semiconductor laser chip (not shown), the thickness of the Au layer 8, the thickness of the AuSn layer 9, and the composition. <P>COPYRIGHT: (C)2008,JPO&INPIT |
