APPARATUS FOR HDP-CVD AND METHOD FOR FORMING INSULATING LAYER USING THE SAME

摘要

An apparatus for HDP-CVD and a method for forming an insulating layer using the same are provided to increases the fabrication efficiency by easily filling up the gap between the semiconductor devices. A high density plasma chemical vapor deposition apparatus comprises gas feed assemblies(20,30,40). The gas feed assembly has gas injection valves and valve control parts. The gas injection valve easily controls the gas injected into a chamber(10) and on/off operation according to the size of gap between the semiconductor devices. The valve control part controls the gas injection valve. The valve control part injects the gas into the chamber using the gas injection valve.