| 摘要 |
A semiconductor light emitting device and a manufacturing method thereof are provided to improve the electrical characteristic by having the immunity about the ESD voltage. A semiconductor light emitting device comprises a semiconductor layer(113) of n-type, an emitting device junction layer(120), and a protecting element junction layer(130). The semiconductor layer of n-type is arranged on a substrate(111). The emitting device junction layer is arranged on the selected region of the semiconductor layer of n-type. The emitting device junction layer has the second semiconductor layer(115) of n-type, and a semiconductor layer(119) of p-type, and an active layer(117). The protecting element junction layer comprises the second semiconductor layer(131) of p-type and the third semiconductor layer(133) of n-type.
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