| 摘要 |
A gallium nitride wafer 11 has a substantially circular shape. The gallium nitride wafer 11 includes a plurality of stripe regions 13, a plurality of single crystal regions 15, and a visible mark 17. Each stripe region 13 represents the direction of <11-20> axis and extends in a direction of a predetermined axis. Each stripe region 13 is interposed between single crystal regions 15. The mark 17 is provided in at least one of front side 11a and back side 11b of the gallium nitride wafer 11, and has a visible size and shape. A dislocation density of the stripe regions 13 is larger than that of the single-crystal regions 15, and the crystal orientation of the stripe regions 13 is different from that of the single crystal regions 15.
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