| 摘要 |
Embodiments of the invention relate generally to integrated circuits, to methods for manufacturing an integrating circuit, and to memory modules. In an embodiment of the invention, an integrated circuit is provided having a memory cell. The memory cell may include a first magnetic layer structure, a tunnel barrier layer structure disposed above the first magnetic layer structure, a second magnetic layer structure disposed above the tunnel barrier layer structure, and at least one sacrificial material layer to suppress electrochemical corrosion of the first magnetic layer structure or the second magnetic layer structure.
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