| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing composition which can sufficiently suppress the polishing rate for an object to be polished having a silicon-nitrogen bond, such as a silicon nitride film, in at least one of acidic, neutral, and basic ranges.SOLUTION: There is provided a polishing composition which comprises (1) an organic compound having an active site that interacts with an object to be polished having a silicon-nitrogen bond, and a suppression site that suppresses the approach of a polishing constituent for polishing the object to be polished toward the object to be polished, and (2) abrasive particles, the polishing composition suppressing the polishing rate for an object to be polished having the silicon-nitrogen bond in at least one of acidic, neutral, and basic ranges.SELECTED DRAWING: None |
