COMPOUND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor device which reduces field concentration at an electrode end to definitely inhibit deterioration in device characteristics and achieves high breakdown voltage and a high output even though an increase in an operating voltage is achieved.SOLUTION: A HEMT has on a SiC substrate 1: a compound semiconductor layer 2; a silicon nitride (SiN) protection film 6 which has an opening 6b and covers a top face of the compound semiconductor layer 2; and a gate electrode 7 formed on the compound semiconductor layer 2 so as to fill the opening 6b. The protection film 6 has a projection part 6c formed by projection of a lower layer portion 6a from a lateral face of the opening 6b.SELECTED DRAWING: Figure 5