| 摘要 |
PROBLEM TO BE SOLVED: To form a uniform diffusion boundary layer of process gas entirely on the diameter of a wafer carrier, during MOCVD epitaxial growth process.SOLUTION: A wafer carrier 140 having a recessed pocket 143 for housing a wafer, where the central shaft of the body is attached onto the spindle of a processing apparatus coaxially with the spindle, includes a rip 180 projecting upward along the perimeter of the upper surface 141. The rip 180 has a rip surface 181 inclining upward from the flat upper surface 141 in the radial outward direction separating from the central shaft. Consequently, the gas flow pattern is improved entirely over the upper surface 141 of the wafer carrier 140, resulting in the enhancement of uniformity of a growth layer formed on the wafer.SELECTED DRAWING: Figure 3A |
