| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of suppressing generation of cracks in an insulating film located below wiring while suppressing increase in wiring resistance.SOLUTION: A semiconductor device 1 includes a semiconductor substrate 12. A passivation film 14 is formed on the semiconductor substrate 12. On the passivation film 14, wiring 15 that has a marginal part 42 and an inner part 43 located at an inner side from the marginal part 42 is formed. The marginal part 42 of the wiring 15 includes a thin-film part 44 (an inclined part 45) having a thickness smaller than that of the inner part 43.SELECTED DRAWING: Figure 4 |
