发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, on which a plurality of mutually different semiconductor devices is mounted and reliability of a semiconductor device junction is improved from a viewpoint of heat conduction and electric conduction.SOLUTION: A semiconductor device (10) includes: a die pad (2); a MOS-FET(11); and a GaN-HEMT(13). The MOS-FET(11) is connected to the die pad (2) with a solder (12). The GaN-HEMT(13) is connected to the die pad (2) with a sintered silver (14) whose melting point after sintering is higher than a melting point of the solder (12). The solder (12) is not interposed between the die pad (2) and the sintered silver (14).SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016219665(A) |
申请公布日期 |
2016.12.22 |
申请号 |
JP20150104764 |
申请日期 |
2015.05.22 |
申请人 |
SHARP CORP |
发明人 |
NAKANISHI HIROYUKI;SATO TOMOTOSHI |
分类号 |
H01L25/10;H01L21/52;H01L25/07;H01L25/18 |
主分类号 |
H01L25/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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