发明名称 |
FABRICATION METHOD OF SEMICONDUCTOR DEVICES FOR REDUCING A SPACE BETWEEN PATTEKUN |
摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to reduce a space between photoresist patterns by using cross-linked reaction between the photoresist patterns and a water soluble polymer. CONSTITUTION: The method comprises the steps of sequentially forming a substance layer(102) and a photoresist layer(104) on a semiconductor substrate(100); forming a photoresist pattern(104a) having a space(106) of a first width(a); forming a water soluble polymer(108) on entire surface of the semiconductor substrate(100); cross-linking the contact portion between the photoresist pattern(104a) and the water soluble polymer(108) by baking the resultant structure; forming a polymer substance pattern(110a) surrounding the photoresist pattern(104a) by developing the water soluble polymer using deionized water and forming a photoresist pattern having a space(112) of a second width(b); and forming a substance pattern(102a) having a space(112) of a second width(b) by etching the substance layer(102) using the photoresist pattern and the polymer substance pattern(110a).
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申请公布号 |
KR20000009374(A) |
申请公布日期 |
2000.02.15 |
申请号 |
KR19980029735 |
申请日期 |
1998.07.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.. |
发明人 |
LEE, DAE YEOB;YEO, GI SUNG;KIM, HAK |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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