发明名称 FABRICATION METHOD OF SEMICONDUCTOR DEVICES FOR REDUCING A SPACE BETWEEN PATTEKUN
摘要 PURPOSE: A fabrication method of semiconductor devices is provided to reduce a space between photoresist patterns by using cross-linked reaction between the photoresist patterns and a water soluble polymer. CONSTITUTION: The method comprises the steps of sequentially forming a substance layer(102) and a photoresist layer(104) on a semiconductor substrate(100); forming a photoresist pattern(104a) having a space(106) of a first width(a); forming a water soluble polymer(108) on entire surface of the semiconductor substrate(100); cross-linking the contact portion between the photoresist pattern(104a) and the water soluble polymer(108) by baking the resultant structure; forming a polymer substance pattern(110a) surrounding the photoresist pattern(104a) by developing the water soluble polymer using deionized water and forming a photoresist pattern having a space(112) of a second width(b); and forming a substance pattern(102a) having a space(112) of a second width(b) by etching the substance layer(102) using the photoresist pattern and the polymer substance pattern(110a).
申请公布号 KR20000009374(A) 申请公布日期 2000.02.15
申请号 KR19980029735 申请日期 1998.07.23
申请人 SAMSUNG ELECTRONICS CO., LTD.. 发明人 LEE, DAE YEOB;YEO, GI SUNG;KIM, HAK
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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