| 摘要 |
PURPOSE: Due to the resistance of polycrystal which forms the upper electrode of a capacitor in DRAM(Dynamic Random Access Memory) among semiconductor devices, which data is stored in, the characteristic of a capacitor is weakened, CONSTITUTION: The method consists of a stage in which the access transistor is formed on a semiconductor board(100), a stage in which an opening(110) is made by forming an interlayer dielectric film on the board, engraving an area, and exposing the source area of the access transistor, a stage in which a capacitor lower electrode(112) is made which is connected to the source area of the access transistor through the opening, and then an electric film and capacitor upper electrode(116) is made on the lower electrode, and a stage in which a silicide film(118) is made by heat-treatment after attaching steel melting at a high temperature to the capacitor upper electrode. In this structure, the contact resistance can be reduced, where contact is formed via an insulator film to apply voltage to the upper electrode of the capacitor. Also, the resistance of the resistance line can be reduced, when making a resistance line in the peripheral circuits.
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