| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory module which increases storage capacity of the memory module per unit area and achieves less power consumption.SOLUTION: A semiconductor device has a bit line BL, two and more word lines WL_1-WL_n and a memory cell having two and more sub-memory cells SCL_1-SCL_n composed of transistors Tr_1-Tr_n and capacitors C_1-C_n. One of a source and a drain of each of the transistors Tr_1-Tr_n is connected to the bit line BL and the other of the source and the drain of each of the transistors Tr_1-Tr_n is connected to each of the capacitors C_1-C_n and a gate of each transistor is connected to one of the word lines WL_1-WL_n. Capacities C_1-C_n of the capacitors in respective sub-memory cells SCL_1-SCL_n are different from each other. |
