ETCHING SOLUTION COMPOSITION

摘要

An etching solution composition for an indium tin oxide transparent conductive film, comprising at least one member selected from oxalic acid, a naphthalene sulfonic acid condensate or a salt thereof, hydrochloric acid, sulfuric acid and a water-soluble amine and water. The etching solution composition can show an excellent ability of removing an etching residue on a transparent conductive film which is formed on a substrate without an under-layer film as well as a transparent conductive film which is formed on an under-layer film formed on a substrate, can also prevent the foam formation, causes no precipitation of any solid material, and therefore has a longer solution service life compared to a conventional one.