NITRIDE-BASED SEMICONDUCTOR SUBSTRATE ETCHING METHOD, NITRIDE-BASED SEMICONDUCTOR FILM CREATION METHOD AND NITRIDE-BASED SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To etch a nitride-based semiconductor substrate more favorably.SOLUTION: A nitride-based semiconductor substrate etching method comprises the steps of: preparing an etchant composed at least one alkali metal hydroxide for etching a nitride-based semiconductor substrate 92; subsequently, melting the etchant and soaking the nitride-based semiconductor substrate in the molten etchant; solidifying the etchant and subsequently dissolving the etchant to obtain an etched nitride-based semiconductor substrate 93.SELECTED DRAWING: Figure 2