Semiconductor devices including vertical transistors, electronic systems including the same and methods of manufacturing the same

摘要

The semiconductor device includes word lines on a semiconductor substrate, common gates connected to each of the word lines and vertically disposed in the semiconductor substrate, buried bit lines intersecting the word lines at a non-right angle in a plan view, and a pair of vertical transistors sharing each of the common gates. The pair of vertical transistors is disposed on both sides of one of the word lines. Further, the pair of vertical transistors is electrically connected to the two adjacent buried bit lines. Electronic systems including the semiconductor device and related methods are also provided.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a pair of buried bit lines in a semiconductor substrate; defining a portion of the semiconductor substrate as an island-shaped active block, the active block being defined to include the pair of buried bit lines; forming a common gate in the active block to divide the active block into a pair of active pillars which are spaced apart from each other, the pair of buried bit lines being located in the respective pair of active pillars; and forming a word line on the common gate, wherein the word line is formed to intersect the pair of buried bit lines at a non-right angle in a plan view and is electrically connected to the common gate.