ATOMIC LAYER GROWTH DEVICE

摘要

An atomic layer growth device that forms a thin film upon a substrate and that is provided with: a film-formation container; a stage that is arranged inside the film-formation container; a susceptor that holds the substrate upon the stage; a mask that is arranged upon the substrate and that is large enough to surround the substrate; a vertically movable mask pin that supports the mask; and a mask-pin hole that vertically passes through the stage and the susceptor and that has the mask pin inserted therethrough such that the mask pin is vertically movable. The susceptor has: a susceptor main body that has a holding surface for the substrate; and a susceptor peripheral-edge section that is located at the perimeter of the susceptor main body and that is shorter in height than the holding surface. The mask-pin hole opens in the susceptor peripheral-edge section. An inactive-gas supply port that upwardly discharges gas to the perimeter of the holding surface is provided to the susceptor peripheral-edge section within the region surrounded by the mask. An inactive-gas supply path that supplies an inactive gas to the inactive-gas supply port is connected to the susceptor peripheral-edge section.