| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the purity of a silicon carbide sintered compact and to decrease the concentration of carbon in the silicon carbide sintered compact. <P>SOLUTION: The method of manufacturing the silicon carbide sintered compact tool used for manufacturing the semiconductor includes: (a) a step for sintering one of a mixture of silicon carbide powder with a non-metallic sintering aid and a formed body prepared from the mixture by a hot press method to obtain a sintered compact 1; (b) a step for machining the sintered compact 1 to obtain a sintered compact 2; (c) a step for heat-treating the sintered compact 2 under an argon atmosphere at 2,000-2,400°C to externally diffuse impurities in the sintered compact 2 to remove the impurities to obtain a sintered compact 3; and (d) a step for arranging the sintered compact 3 and a mixture of silicon oxide and carbon in the same atmosphere, heating at 1,600-1,700°C under an argon atmosphere and supplying a gas produced from the mixture to the surface of the sintered compact 3 to obtain a sintered compact 4. <P>COPYRIGHT: (C)2007,JPO&INPIT |
