| 摘要 |
A method for manufacturing an element isolation layer of a spin-on insulation layer is provided to reduce a polishing time and a polishing cost by reducing a polishing quantity of a following CMP process by an etch back process. A pad layer pattern(12) including a nitride film is formed on a substrate(11). The substrate is etched by using the pad layer pattern as the etching barrier, and a trench(13) is formed. A spin-on insulation layer(17C) is filled in the front of the substrate with the trench. The spin-on insulation layer is cured firstly. The firstly cured spin-on insulation layer is etched back. The spin-on insulation layer is chemically and mechanically polished to expose the surface of the pad pattern layer. The spin-on insulation layer in which the chemical mechanical polishing process is performed is cured secondly. The spin-on insulation layer is the thin film made of the source selected among the group consisting of perhydro-polysilazane, silicate, siloxane, HSQ(Hydrogen SilsesQuioxane) and CSQ(Carbon SilsesQuioxane).
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