发明名称 ADDRESS REPLACING CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS HAVING THE SAME
摘要 An address replacing circuit includes a sub-bank region selecting unit that allows a first sub-bank region or a second sub-bank region to be selectively activated, in response to a row address and first and second bits of a column address in accordance with operation modes a first column region activating unit that generates a first column region activating address and a second column region activating address from the first bit of the column address, a second column region activating unit that generates a third column region activating address and a fourth column region activating address from the second bit of the column address, and a column region selecting unit that allows at least one of first to fourth column regions of the first sub-bank region and first to fourth column regions of the second sub-bank region to be selectively activated, in response to the first to fourth column region activating addresses.
申请公布号 US2009059709(A1) 申请公布日期 2009.03.05
申请号 US20080026470 申请日期 2008.02.05
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 KIM KEUN KOOK
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
主权项
地址