EPITAXIAL BLOCK LAYER FOR A FIN FIELD EFFECT TRANSISTOR DEVICE

摘要

Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

主权项

1. A method for forming a device, the method comprising:
forming a set of fin field effect transistors (FinFETs) over a substrate; forming a spacer layer over each of the set of FinFETs; forming an epitaxial (epi) block layer over one of the FinFETs; removing a portion of the spacer layer in an epi junction area adjacent the one of the FinFETs; forming a set of recesses in the substrate in the epi junction area adjacent the one of the FinFETs; and forming an epi material within the set of recesses.