CMOS IMAGE SENSOR STRUCTURE WITH IR/NIR INTEGRATION

摘要

A semiconductor device includes a substrate, light sensing devices, at least one infrared radiation sensing device, a transparent insulating layer, an infrared radiation cut layer, a color filter layer and an infrared radiation color filter layer. The light sensing devices and the at least one infrared radiation sensing device are disposed in the substrate and are adjacent to each other. The transparent insulating layer is disposed on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device. The infrared radiation cut layer is disposed on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation. The color filter layer is disposed on the infrared radiation cut layer. The infrared radiation color filter layer is disposed on the transparent insulating layer overlying the at least one infrared radiation sensing device.

主权项

1. A semiconductor device, comprising:
a substrate; a plurality of light sensing devices disposed in the substrate; at least one infrared radiation sensing device disposed in the substrate, wherein the light sensing devices and the at least one infrared radiation sensing device are adjacent to each other; a transparent insulating layer on the substrate overlying the light sensing devices and the at least one infrared radiation sensing device; an infrared radiation cut layer on the transparent insulating layer overlying the light sensing devices for filtering out infrared radiation and/or near infrared radiation; a color filter layer on the infrared radiation cut layer; and an infrared radiation color filter layer on the transparent insulating layer overlying the at least one infrared radiation sensing device.