发明名称 |
TRENCH EPITAXIAL GROWTH FOR A FINFET DEVICE HAVING REDUCED CAPACITANCE |
摘要 |
A FinFET device includes a semiconductor fin, a gate electrode extending over a channel of the fin and sidewall spacers on each side of the gate electrode. A dielectric material is positioned on each side of a bottom portion of said fin, with an oxide material on each side of the fin overlying the dielectric material. A recessed region, formed in the fin on each side of the channel region, is delimited by the oxide material. A raised source region fills the recessed region and extends from the fin on a first side of the gate electrode to cover the oxide material to a height which is in contact with the sidewall spacer. A raised drain region fills the recessed region and extends from the fin on a second side of the gate electrode to cover the oxide material to a height which is in contact with the sidewall spacer. |
申请公布号 |
US2016181381(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
US201414577431 |
申请日期 |
2014.12.19 |
申请人 |
STMicroelectronics, Inc. ;International Business Machines Corporation ;GlobalFoundries Inc |
发明人 |
Liu Qing;Cai Xiuyu;Xie Ruilong;Yeh Chun-Chen |
分类号 |
H01L29/417;H01L29/66;H01L29/06;H01L29/78 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated FinFET transistor circuit, comprising:
a fin of semiconductor material; a transistor gate electrode extending over a channel region of said fin; sidewall spacers on each side of the transistor gate electrode; wherein said fin further includes a recessed region on each side of the channel region; an oxide material on each side of each recessed region in the fin; a raised source region of epitaxial growth material filling said recessed region and extending from said fin on a first side of the transistor gate electrode to cover the oxide material to a height above said fin and in contact with the sidewall spacer; and a raised drain region of said epitaxial growth material filling said recessed region and extending from said fin on a second side of the transistor gate electrode to cover the oxide material to said height above said fin and in contact with the sidewall spacer. |
地址 |
Coppell TX US |