DEVICE FOR VERTICAL GALVANIC METAL DEPOSITION ON A SUBSTRATE

摘要

A method and device for vertical galvanic metal deposition on a substrate, the device including at least first and second device elements arranged vertically parallel to each other, the first device element including at least a first anode element having a plurality of through-going conduits and at least a first carrier element having a plurality of through-going conduits, the at least first anode element and the at least first carrier element firmly connected to each other; and the second device element including at least a first substrate holder adapted to receive at least one substrate to be treated, the at least one substrate holder at least partially surrounding the at least one substrate along its outer frame after receiving it; the distance between the first anode element and the at least first substrate holder ranging from 2 to 15 mm.

主权项

1. Device for or vertical galvanic metal deposition on a substrate wherein the device comprises at least a first device element and a second device element, which are arranged in a vertical manner parallel to each other, wherein the first device element comprises at least a first anode element having a plurality of through-going conduits and at least a first carrier element having a plurality of through-going conduits, wherein said at least first anode element and said at least first carrier element are firmly connected to each other; and wherein the second device element comprises at least a first substrate holder which is adapted to receive at least a first substrate to be treated, wherein said at least first substrate holder is at least partially surrounding the at least first substrate to be treated along its outer frame after receiving it; and wherein the distance between the first anode element of the at least first device element and the at least first substrate holder of the second device element ranges from 2 to 15 mm;
wherein the plurality of through-going conduits of the first carrier element of the first device element are going through the first carrier element in form of straight lines having an angle relating to the perpendicular on the carrier element surface between 10° and 60°.