| 发明名称 |
GETTER, MEMS DEVICE AND METHOD OF FORMING THE SAME |
| 摘要 |
A getter is provided. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A MEMS device is provided. The MEMS device includes a substrate and a getter over the substrate. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; and providing a getter over the substrate, wherein the getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum, and wherein all of the percentages are atomic percentages. |
| 申请公布号 |
US2016214077(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201414252835 |
申请日期 |
2014.04.15 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
LIANG CHIN-WEI;TSAI CHENG-YUAN;CHENG CHUN-WEN;TSAI CHIA-SHIUNG |
| 分类号 |
B01J20/02;B81C1/00;C22C16/00;C22C30/00;C22C27/02;B81B7/00;B01J20/32 |
主分类号 |
B01J20/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A getter consisting essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum, all of the percentages being atomic percentages. |
| 地址 |
Hsinchu TW |
