| 摘要 |
PROBLEM TO BE SOLVED: To achieve a reduction in area while suppressing deterioration in characteristics.SOLUTION: A solid-state imaging apparatus 100 includes pixels 101 each including: a photoelectric conversion part 111 for photoelectrically converting incident light; an amplification transistor 114 which is provided on a semiconductor substrate 121 and detects a signal charge of the photoelectric conversion part 111; and a reset transistor 113 for initializing a signal voltage of the photoelectric conversion part 111. The photoelectric conversion part 111 has a pixel electrode 135 and a photoelectric conversion layer 136 disposed on the pixel electrode 135. The pixel electrode 135 is provided in a layer above the amplification transistor 114. The reset transistor 113 is provided in a layer above the amplification transistor 114 and below the pixel electrode 135. A semiconductor layer of the reset transistor 113 is mainly composed of a semiconductor having a band gap larger than that of a semiconductor constituting the semiconductor substrate 121. |
