发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which exhibits an excellent program speed as a memory transistor; and provide a semiconductor device including the above-described transistor.SOLUTION: Provided is a semiconductor device 1A comprising a memory region 10a and a logic region 20a, for example. The memory region 10a includes a transistor (memory transistor) 10 for storing information by accumulating charge in a side wall insulation film 13. A width W1 of the side wall insulation film 13 of the memory transistor 10 included in the memory region 10a is set larger than a width W2 of a side wall insulation film 23 of a transistor (logic transistor) 20 included in the logic region 20a.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016184721(A) |
申请公布日期 |
2016.10.20 |
申请号 |
JP20160017827 |
申请日期 |
2016.02.02 |
申请人 |
MIE FUJITSU SEMICONDUCTOR LTD |
发明人 |
EMA TAIJI;YASUDA MAKOTO;MIZUTANI KAZUHIRO |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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