| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of reducing a pollution effect on a wafer being transported.SOLUTION: An ion implantation device 10 comprises: a vacuum processing chamber 16 in which ion implantation processing is performed on a wafer W; one or more load lock chambers 54a, 54b for feeding a wafer into the vacuum processing chamber 16 and feeding out the wafer from the vacuum processing chamber 16; an intermediate feeding chamber 52 provided to be adjacent to the vacuum processing chamber 16 and the load lock chambers 54a, 54b; load lock chamber-intermediate feeding chamber intercommunication mechanisms 72a, 72b having load lock chamber-intermediate feeding chamber intercommunication ports through which the load lock chambers 54a, 54b intercommunicate with the intermediate feeding chamber 52, and a gate valve for hermetically sealing the load lock chamber-intermediate feeding chamber intercommunication port; and an intermediate feeding chamber-vacuum processing chamber intercommunication mechanism 70 having an intermediate feeding chamber-vacuum processing chamber intercommunication port through which the intermediate feeding chamber 52 and the vacuum processing chamber 16 intercommunicate with each other, and a movable shield plate that can shield a part or the whole of the intermediate feeding chamber-vacuum processing chamber intercommunication port. |
