| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem of a semiconductor device, where the surface of a SiC substrate is covered with a thermal oxide film, an opening is formed in the thermal oxide film, and a Schottky electrode is formed on the surface of the Si substrate exposed at the opening, that the leakage current is large.SOLUTION: A semiconductor structure is formed in a SiC substrate, a thermal oxide film is formed on the surface of the SiC substrate, a part of the thermal oxide film is etched to form an opening reaching the surface of the SiC substrate, and then the opening is filled with a material becoming a Schottky electrode. Between completion of the semiconductor structure and formation of the thermal oxide film, a process for forming a sacrifice thermal oxide film on the surface of the SiC substrate is not passed. Consequently, generation of nanobits is suppressed, and the leakage current is suppressed.SELECTED DRAWING: Figure 1 |
