STRESS AND TEMPERATURE COMPENSATED HALL SENSOR, AND METHOD

摘要

An integrated semiconductor device for measuring a magnetic field, comprising: a Hall sensor, a first lateral isotropic sensor having a first stress sensitivity and a first temperature sensitivity, a second lateral isotropic sensor having a second stress sensitivity and a second temperature sensitivity, optional amplifying means, digitization means; and calculation means configured for calculating a stress and temperature compensated Hall value in the digital domain, based on a predefined formula which can be expressed as an n-th order polynomial in only two parameters. These parameters may be obtained directly from the sensor elements, or they may be calculated from a set of two simultaneous equations. A method of obtaining a Hall voltage signal, and compensating said signal for stress and temperature drift.

主权项

1. An integrated semiconductor device for measuring a magnetic field strength, comprising:
at least one Hall element configured for providing a Hall signal indicative of the magnetic field strength to be measured; a first lateral isotropic sensor having a first stress sensitivity and a first temperature sensitivity and configured for providing a first sensor signal; a second lateral isotropic sensor having a second stress sensitivity, and having a second temperature sensitivity and configured for providing a second sensor signal; wherein the first temperature sensitivity is different from the second temperature sensitivity or the first stress sensitivity is different from the second stress sensitivity or both; digitization means arranged for digitizing the Hall signal and the first sensor signal and the second sensor signal so as to obtain three digital values; calculation means configured for solving a set of only two simultaneous polynomial equations with predefined coefficients in only two variables in order to obtain a stress-value and a temperature-value, and configured for calculating a stress-compensated and temperature-compensated Hall value using a predefined correction formula in only two parameters being said calculated stress value and said calculated temperature value.