发明名称 METHOD AND APPARATUS FOR FORMING RESIST PATTERN, METHOD FOR DESIGNING PHOTOMASK, AND PHOTOMASK
摘要 <p><P>PROBLEM TO BE SOLVED: To set the exposure light quantity by simple calculation in a method for forming a resist pattern and to produce a three-dimensional resist pattern having little error with respect to the designed value. <P>SOLUTION: The method for forming the resist pattern includes steps of: (S2) setting the amount of the resist to be removed in each region of a plurality of two-dimensional regions produced by dividing the objective three-dimensional resist pattern; (S3) calculating the exposure light quantity required to each region based on the amount of the resist to be removed in each region; (S4) determining the exposure light quantity to expose the resist surface in each region by using a spread function based on the required exposure light quantity in each region; and (S5, S6) exposing the photoresist based on the exposure light quantity of each region to form a three-dimensional resist pattern. Thus, the exposure light quantity can be set by easy calculation and the three-dimensional resist pattern having little error with respect to the designed value can be produced. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005049460(A) 申请公布日期 2005.02.24
申请号 JP20030203915 申请日期 2003.07.30
申请人 RICOH CO LTD 发明人 SATO YASUHIRO
分类号 G03F1/76;G03F1/78;G03F7/20;(IPC1-7):G03F1/08 主分类号 G03F1/76
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