CHEMICAL MECHANICAL POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To meet a need for a high degree of conditioning tolerance when using ceria based abrasive slurry.SOLUTION: A method of chemical mechanical polishing a substrate comprises: providing a polishing machine having a platen; providing a substrate having an exposed silicon oxide surface; providing a chemical mechanical polishing pad comprising a polyurethane polishing layer, where the polyurethane polishing layer composition exhibits an acid number of 0.5 mg(KOH)/g or more; providing an abrasive slurry comprising water and a ceria abrasive; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the abrasive slurry onto a polishing surface of the polyurethane polishing layer of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate.