| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device capable of suppressing a leakage current flowing between a drain electrode and a semiconductor substrate, a method for manufacturing the compound semiconductor device, and the like.SOLUTION: A compound semiconductor device includes: a semiconductor substrate 101; a channel layer 103 above the semiconductor substrate 101; a carrier supply layer 104 above the channel layer 103; and a gate electrode 105g, a source electrode 105s and a drain electrode 105d above the carrier supply layer 104. The semiconductor substrate 101 has an impurity-containing region 102 containing impurities, and the level formed by the impurities is lower by 0.25 eV or more than the lower end of a conduction band of silicon, and higher than the upper end of a valence band of silicon. |
