发明名称 |
METHOD FOR DRIVING PHASE CHANGE MEMORY DEVICE |
摘要 |
A method is disclosed for driving a phase change memory device including a phase change resistor. The method includes applying a trigger voltage to the phase change resistor for a first write time to preheat the phase change resistor, applying a first write voltage to the phase change resistor for a second write time to control a first state of the phase change resistor, and applying a second voltage to the phase change resistor for a third write time to control a second state of the phase change resistor.
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申请公布号 |
US2009027975(A1) |
申请公布日期 |
2009.01.29 |
申请号 |
US20080127988 |
申请日期 |
2008.05.28 |
申请人 |
KANG HEE BOK;HONG SUK KYOUNG |
发明人 |
KANG HEE BOK;HONG SUK KYOUNG |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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