发明名称 |
RECORDING MATERIAL FOR PHASE CHANGE SOLID MEMORY AND PHASE CHANGE SOLID MEMORY |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a recording material for a phase change solid memory capable of enhancing the number of times of repetitive recording and erasure and the switching operation speed. <P>SOLUTION: The recording material for the phase change solid memory may include a uniform-mixed phase that includes: a tellurium atom containing alkali metal iodide phase or a tellurium atom containing silver iodide phase, and a tellurium-antimony alloy phase. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010020825(A) |
申请公布日期 |
2010.01.28 |
申请号 |
JP20080179341 |
申请日期 |
2008.07.09 |
申请人 |
ELPIDA MEMORY INC |
发明人 |
TOMINAGA JUNJI;FONS PAUL;KOLOBOV ALEXANDER |
分类号 |
G11B7/243;B41M5/26;G11B7/24 |
主分类号 |
G11B7/243 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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