发明名称 RECORDING MATERIAL FOR PHASE CHANGE SOLID MEMORY AND PHASE CHANGE SOLID MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a recording material for a phase change solid memory capable of enhancing the number of times of repetitive recording and erasure and the switching operation speed. <P>SOLUTION: The recording material for the phase change solid memory may include a uniform-mixed phase that includes: a tellurium atom containing alkali metal iodide phase or a tellurium atom containing silver iodide phase, and a tellurium-antimony alloy phase. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010020825(A) 申请公布日期 2010.01.28
申请号 JP20080179341 申请日期 2008.07.09
申请人 ELPIDA MEMORY INC 发明人 TOMINAGA JUNJI;FONS PAUL;KOLOBOV ALEXANDER
分类号 G11B7/243;B41M5/26;G11B7/24 主分类号 G11B7/243
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