NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE

摘要

A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a plurality of word lines and configured to provide operating voltages to the memory cells, wherein the address decoder is disposed between the first substring group and second substring group.

主权项

1. A nonvolatile memory device comprising:
a first plane disposed on a first semiconductor layer and including first cell strings formed in a first direction orthogonal to the first semiconductor layer; a second plane disposed on a second semiconductor layer and including second cell strings formed in the first direction; a first address decoder configured to supply first operation voltages to the first plane; a second address decoder configured to supply second operation voltages to the second plane; a first peripheral circuit disposed between a substrate and the first semiconductor layer and configured to control the first address decoder; and a second peripheral circuit disposed between the substrate and the second semiconductor layer and configured to control the second address decoder, wherein the first peripheral circuit and second peripheral circuit are connected via a peripheral conductive layer disposed under the first semiconductor layer and second semiconductor layer.