THIN FILM TRANSISTOR

摘要

A thin film transistor (100). The thin film transistor (100) comprises a substrate (110); a first gate (120), a first gate insulation layer (130), a semiconductor layer (140), an etching stop layer (150) and a second gate (160) that are stacked on the surface of the substrate (110); and a source (181) and a drain (182). The thickness of the semiconductor layer (140) ranges from 200 nm to 2,000 nm. The etching stop layer (150) is provided with a first through hole (151) and a second through hole (152), and the first through hole (151) and the second through hole (152) are arranged corresponding to the semiconductor layer (140). The source (181) and the drain (182) penetrate through the first through hole (151) and the second through hole (152) respectively and are connected to the semiconductor layer (140). The thin film transistor (100) has high ON-state current and a high switching speed.