スピン転移トルク磁気抵抗ランダムアクセスメモリにおける読出し及び書込みのためのワードライン・トランジスタ強度制御

摘要

Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.