发明名称 |
METHOD OF FABRICATING INTEGRATED CIRCUIT DEVICES |
摘要 |
An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors. |
申请公布号 |
US2016240441(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615136450 |
申请日期 |
2016.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG Myung-Gil;KIM Sung-Bong;OH Chang-Woo;KIM Dong-Won |
分类号 |
H01L21/8234;H01L29/66 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |