| 发明名称 |
PHYSICAL VAPOR DEPOSITION SYSTEM AND PHYSICAL VAPOR DEPOSITING METHOD USING THE SAME |
| 摘要 |
A physical vapor deposition system includes a chamber, a cover plate, a pedestal, and a collimator. The cover plate is disposed on the chamber for holding a target. The pedestal is disposed in the chamber for supporting a wafer. The collimator is mounted between the cover plate and the pedestal. The collimator includes a plurality of sidewall sheets together forming a plurality of passages. At least one of the passages has an entrance and an exit opposite to the entrance. The entrance faces the cover plate, and the exit faces the pedestal. A thickness of one of the sidewall sheets at the entrance is thinner than a thickness of the sidewall sheet at the exit. |
| 申请公布号 |
US2016240357(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201514622397 |
申请日期 |
2015.02.13 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHI Chih-Chien;SU Hung-Wen;LEE Pei-Hsuan |
| 分类号 |
H01J37/34;C23C14/35;C23C14/34 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A physical vapor deposition system, comprising:
a chamber; a cover plate disposed on the chamber for holding a target; a pedestal disposed in the chamber for supporting a wafer; and a collimator disposed between the cover plate and the pedestal, wherein the collimator comprises:
a plurality of sidewall sheets together forming a plurality of passages, wherein at least one of the passages has an entrance and an exit opposite to the entrance, the entrance faces the cover plate, and the exit faces the pedestal, a thickness of one of the sidewall sheets at the entrance is thinner than a thickness of the sidewall sheet at the exit. |
| 地址 |
Hsinchu TW |
