发明名称 Adjustable Mass Resolving Aperture
摘要 Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.
申请公布号 US2016240349(A1) 申请公布日期 2016.08.18
申请号 US201615136503 申请日期 2016.04.22
申请人 Glenn Lane Family Limited Liability Limited Partnership 发明人 LANE Glenn E.
分类号 H01J37/30;H01J49/06;H01J37/317;C23C14/48;C23C14/54 主分类号 H01J37/30
代理机构 代理人
主权项 1. An ion implantation system, comprising: an ion source configured to generate an ion beam having a plurality of ions that propagate along a beam line; a mass analyzer configured to generate a magnetic field that bends a trajectory of each of the ions within the ion beam such that ions having a lower mass to charge ratio are bent more than ions having a higher mass to charge ratio, wherein the trajectory of each of the ions lies in a corresponding plane; a mass resolving aperture (MRA), wherein the MRA has an opening; wherein the MRA is positioned such that a first portion of the ions in the ion beam as the ion beam approaches the MRA pass through the opening and are in the ion beam after the ion beam exits the MRA and the MRA alters a motion of a second portion of the ions in the ion beam as the ion beam approaches the MRA such that the second portion of the ions are not in the ion beam after the ion beam exits the MRA, wherein the MRA has an edge adjacent the opening, wherein the edge has a face surface and a side surface, wherein a normal to the face surface is parallel with the beam path and a normal to the side surface is perpendicular to the beam path, wherein at least a portion of the MSA adjacent the face surface is segmented such that a first segment of the at least a portion of the MRA adjacent the face surface has a different electric charge and/or a different magnetic polarity than a second segment of the at least a portion of the MRA.
地址 Summerfield FL US