| 摘要 |
The invention relates to a method for producing a semiconductor body (1) comprising at least one cavity (10) provided with a contact layer (7), said method comprising the steps: provision of the semiconductor body (1); application of a first mask layer (5) and a second mask layer (6) to the semiconductor body (1), the second mask layer (6) being applied to the semiconductor body (1) in an unpatterned manner and the first mask layer (5) being applied to the second mask layer (6) in a patterned manner and having at least one first mask opening (50); forming of at least one second mask opening (60) in the second mask layer (6) and of at least one cavity (10) in the semiconductor body (1) in the region of the at least one first mask opening (50) of the first mask layer (5), the cavity (10) having a lateral face (11) and a base face (12) and said cavity (10), together with the second mask opening (60), forming an undercut (13) when viewed from the first mask opening (50); application of a contact layer (7) to the first mask layer (5) and the base face (12) of the at least one cavity (10) by means of a targeted deposition method; application of a passivation layer (8) to the lateral face (11) of the at least one cavity (10). |
