A manufacturing method for a field effect transistor, comprising: (S110) providing a substrate; (S120) forming a gate oxide layer (200) on the substrate; (S130) forming a polycrystalline silicon layer (300) on the gate oxide layer (200); (S140) forming photoresist (400) on the polycrystalline silicon layer (300); (S150) exposing and developing the photoresist (400) to form an exposed area (310), so as to expose a part of the polycrystalline silicon layer (300); (S160) removing the part of the polycrystalline silicon layer (300) which is located in the exposed area (310) and the gate oxide layer (200) which is located under the part of the polycrystalline silicon layer; and (S170) implanting impurity in the exposed area (310) at an implantation angle of 70°-80° with the surface of the substrate (100) so as to form a source end well region (610) on the substrate (100).
