| 发明名称 |
METHOD AND APPARATUS FOR DEPOSITING A MATERIAL |
| 摘要 |
A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber. |
| 申请公布号 |
US2016289815(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201615084574 |
申请日期 |
2016.03.30 |
| 申请人 |
SPTS TECHNOLOGIES LIMITED |
发明人 |
BURGESS STEPHEN R.;HYNDMAN RHONDA;RASTOGI AMIT;LIMA EDUARDO PAULO;WIDDICKS CLIVE L.;RICH PAUL;HAYMORE SCOTT;COOK DANIEL |
| 分类号 |
C23C14/06;C23C14/35;H01J37/34;C23C14/34 |
主分类号 |
C23C14/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields;
in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber. |
| 地址 |
NEWPORT GB |
