发明名称 |
Vapor phase growth method for al-containing III-V group compound semiconductor, and method and device for producing al-containing IIl-V group compound semiconductor |
摘要 |
A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.
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申请公布号 |
US2005166835(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20040509177 |
申请日期 |
2004.09.27 |
申请人 |
TOKYO UNIVERSITY AGRICULTURE AND TECHNOLOGY TLO CO |
发明人 |
KOUKITSU AKINORI;KUMAGAI YOSHINAO;MARUI TOMOHIRO |
分类号 |
C23C16/34;C23C16/30;C30B25/02;C30B25/14;H01L21/205;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C23C16/34 |
代理机构 |
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地址 |
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