发明名称 |
P-TYPE DIFFUSION LAYER FORMATION COMPOSITION, P-TYPE DIFFUSION LAYER MANUFACTURING METHOD AND SOLAR CELL ELEMENT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a p-type diffusion layer formation composition, a p-type diffusion layer manufacturing method and a solar cell element manufacturing method, which can inhibit reaction between a p-type diffusion layer formation composition and a substrate at a high temperature while inhibiting the occurrence of warpage of a silicon substrate at the time of a heat treatment to form a low-resistance p-type diffusion layer.SOLUTION: A p-type diffusion layer formation composition contains at least one boron compound selected from a boron nitride and a boron carbide, and a dispersion medium. A p-type diffusion layer and a solar cell element having a p-type diffusion layer are manufactured by coating a semiconductor substrate with the p-type diffusion layer formation composition and performing a heat diffusion treatment on the semiconductor substrate. |
申请公布号 |
JP2016015509(A) |
申请公布日期 |
2016.01.28 |
申请号 |
JP20150172190 |
申请日期 |
2015.09.01 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
ODA AKIHIRO;YOSHIDA MASATO;NOJIRI TAKESHI;MACHII YOICHI;IWAMURO MITSUNORI;KIZAWA KEIKO;ADACHI SHUICHIRO;SATO TETSUYA |
分类号 |
H01L21/225;H01L31/068;H01L31/18 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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