发明名称 PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER HAVING THE DUAL HEAT BLOCKING WALLS
摘要 A plasma-enhanced chemical vapor deposition chamber having a dual heat blocking fence is provided to prevent heat loss of a susceptor by installing a heat blocking fence between the susceptor and an inner wall of the chamber. A deposition chamber includes a lower body having a susceptor(13), on which a substrate is loaded, and an upper body positioned on the lower body. The upper body has a high-frequency electrode plate and a shower head. A heat blocking fence(25) is interposed between the susceptor and an inner wall of the chamber in the lower body of the chamber to block the heat radiated from the susceptor. A protective plate(15) is attached to the inner wall of the chamber to protect the inner wall when cleaning the chamber.
申请公布号 KR20070094412(A) 申请公布日期 2007.09.20
申请号 KR20060025065 申请日期 2006.03.17
申请人 KOSTEK SYSTEMS INC. 发明人 BAE, JUN HO
分类号 H01L21/205 主分类号 H01L21/205
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