发明名称 |
Oxide etch with NH3-NF3 chemistry |
摘要 |
The present invention generally provides apparatus and methods for selectively removing various oxides on a semiconductor substrate. One embodiment of the invention provides a method for selectively removing an oxide on a substrate at a desired removal rate using an etching gas mixture. The etching gas mixture comprises a first gas and a second gas, and a ratio of the first gas and a second gas is determined by the desired removal rate. |
申请公布号 |
EP1944796(A2) |
申请公布日期 |
2008.07.16 |
申请号 |
EP20080150111 |
申请日期 |
2008.01.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KAO, CHIEN-THE;ARGHAVANI, REZA;LU, XIN LIANG |
分类号 |
H01L21/3105;H01L21/311 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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