发明名称 |
Wafer Level Package Using Silicon Via Contacts for Cmos Image Sensor and Method of Fabricating the Same |
摘要 |
The present invention relates to a wafer level package of a CMOS image sensor using silicon via contacts and a method of manufacturing the same. A wafer level package of a CMOS image sensor includes: a wafer where image sensor elements including a plurality of electrode pads are formed; a transparent substrate attached to a front side of the wafer; a via hole formed from a back side of the wafer to underneath of a plurality of electrode pads of the front side; a passivation layer formed on a remaining portion except the underneath of the electrode pads in the via hole and whole back side of the wafer; a via contact formed in the via hole; and a solder bump formed on the via contact of the back side of the wafer.
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申请公布号 |
US2008217715(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20080088529 |
申请日期 |
2008.03.28 |
申请人 |
PARK TAE-SEOK;KIM YOUNG SUNG |
发明人 |
PARK TAE-SEOK;KIM YOUNG SUNG |
分类号 |
H01L31/0203;H01L31/18 |
主分类号 |
H01L31/0203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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