| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition showing high sensitivity, high resolution and good line width roughness (LWR), and further, reduced in the swing due to standing waves, shape and variation of a resist film thickness in a high reflection substrate by KrF ion implantation, and to provide a pattern-forming method using the composition. <P>SOLUTION: The resist composition includes: (A) a resin including a repeating unit capable of decomposing by the action of an acid in a side chain and a repeating unit having a heterocyclic ring; and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation. The pattern-forming method uses the resist composition. <P>COPYRIGHT: (C)2009,JPO&INPIT |
